SPP11N60CFD Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Intrinsic fast-recovery body diode
• Extreme low reverse recovery charge
SPP11N60CFD
V_DS @ T_jmax 650
V
R_DS(on)
0.44 Ω
I_D
11 A
P-TO220-3-1
Type
Package
Ordering Code
SPP11N60CFD P-TO220-3-1 Q67040-S4618
Marking
11N60CFD
Maximum Ratings
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T _C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D = 5.5 A, V_DD = 50 V
I_{D puls}
E_AS
Avalanche energy, repetitive t_AR limited by T_jmax1) E_AR
I_D = 11 A, V_DD = 50 V
Avalanche current, repetitive t_AR limited by T_jmax I_AR
Reverse diode dv/dt
dv/dt
I_S=11A, V_DS=480V, T_j=125°C
Gate source voltage
V_GS
Gate source voltage AC (f >1Hz)
V_GS
Power dissipation, T_C = 25°C
Operating and storage temperature
P_tot
T_j , T_stg
Page 1
Value
Unit
A
11
7
28
340
mJ
0.6
11
A
40
V/ns
±20
V
±30
125
W
-55... +150
°C
2003-12-23