SPP11N60C3 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
SPP11N60C3, SPB11N60C3
SPI11N60C3, SPA11N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V_DS @ T_jmax 650
V
R_DS(on)
0.38 Ω
I_D
11 A
• Periodic avalanche rated
P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1
• Extreme dv/dt rated
• High peak current capability
1 ²³
• Improved transconductance
P-TO220-3-31
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP11N60C3
SPB11N60C3
SPI11N60C3
SPA11N60C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4395
P-TO263-3-2 Q67040-S4396
P-TO262-3-1 Q67042-S4403
P-TO220-3-31 _Q67040-S4408
Marking
11N60C3
11N60C3
11N60C3
11N60C3
Maximum Ratings
Parameter
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=5.5A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=11A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
Symbol
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
SPSP_PB__BI SPA
11
11¹⁾
7
7¹⁾
33
33
340
340
0.6
0.6
11
11
±20
±20
±30
±30
125
33
-55...+150
Unit
A
A
mJ
A
V
W
°C
Page 1
2003-07-01