SPP10N10L Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

SIPMOS^ Power-Transistor
Feature
 N-Channel
 Enhancement mode
 Logic Level
175°C operating temperature
 Avalanche rated
 dv/dt rated
SPI10N10L
SPP10N10L
Product Summary
V_DS
100 V

R_DS(on) 154 m
I_D
10.3 A
PG-TO262-3-1
PG-TO220-3-1
Type
SPP10N10L
SPI10N10L
Package
PG-TO220-3-1
PG-TO262-3-1
Ordering Code
Q67042-S4163
Q67042-S4162
Marking
10N10L
10N10L
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C=25°C
T_C=100°C
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse

I_D=10.3 A , V_DD=25V, R_GS=25
I_{D puls}
E_AS
Reverse diode dv/dt
dv/dt
I_S=10.3A, V_DS=80V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
V_GS
Power dissipation
P_tot
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Value
10.3
8.1
42.2
60
6
±20
50
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.1
Page 1
2005-02-14