SPP08P06PH Datasheet, PDF (1/10 Pages) Infineon Technologies AG – SIPMOSÒ Power-Transistor

SPP08P06P H
SIPMOS^® Power-Transistor
Features
Product Summary
· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
Drain source voltage
V_DS
-60 V
Drain-source on-state resistance R_DS(on) 0.3 W
Continuous drain current
I_D
-8.8 A
· 175°C operating temperature
• Pb-free lead plating; RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Type
SPP08P06P H
Package
PG-TO220-3
Pin 1 PIN 2/4 PIN 3
G
D
S
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current
T_C = 25 °C
I_{D puls}
Avalanche energy, single pulse
E_AS
I_D = -8.8 A , V_DD = -25 V, R_GS = 25 W
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
E_AR
dv/dt
I_S = -8.8 A, V_DS = -48 , di/dt = 200 A/µs,
T_jmax = 175 °C
Gate source voltage
Power dissipation
T_C = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
-8.8
-6.2
-35.2
70
4.2
6
±20
42
-55...+175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 1.6
Page 1
2011-08-31