SPP08N80C3 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
SPP08N80C3
SPA08N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V_DS
R_DS(on)
I_D
800 V
0.65 Ω
8
A
• Periodic avalanche rated
P-TO220-3-31 P-TO220-3-1
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
1 ²³
P-TO220-3-31
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP08N80C3
SPA08N80C3
Package
Ordering Code
P-TO220-3-1 Q67040_S4436
P-TO220-3-31 Q67040-S4437
Marking
08N80C3
08N80C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=1.6A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=8A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
SPP
SPA
8
8¹⁾
5.1
5.1¹⁾
24
24
340
340
Unit
A
A
mJ
0.2
0.2
8
8
A
±20
±20 V
±30
±30
104
40 W
-55...+150
°C
Page 1
2003-07-02