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| SPP08N50C3_09 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated | |||
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SPP08N50C3, SPI08N50C3
SPA08N50C3
Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Ultra low gate charge
VDS @ Tjmax 560 V
RDS(on)
0.6 â¦
ID
7.6 A
⢠Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
⢠Extreme dv/dt rated
⢠Ultra low effective capacitances
⢠Improved transconductance
23
1
P-TO220-3-31
⢠PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
SPP08N50C3
SPI08N50C3
SPA08N50C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4567
Q67040-S4568
SP000216306
Marking
08N50C3
08N50C3
08N50C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 6)
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Rev. 2.91
Page 1
Value
Unit
SPP_I
SPA
A
7.6
7.61)
4.6
4.61)
22.8
22.8 A
230
230 mJ
0.5
0.5
7.6
7.6
±20
±20
±30
±30
83
32
-55...+150
15
A
V
W
°C
V/ns
2009-11-27
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