SPP08N50C3 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
SPP08N50C3, SPI08N50C3
SPA08N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V_DS @ T_jmax 560 V
R_DS(on)
0.6 Ω
I_D
7.6 A
• Periodic avalanche rated
P-TO220-3-31 P-TO262-3-1 P-TO220-3-1
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
1 ²³
P-TO220-3-31
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP08N50C3
SPI08N50C3
SPA08N50C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4567
P-TO262-3-1 Q67040-S4568
P-TO220-3-31 Q67040-S4576
Marking
08N50C3
08N50C3
08N50C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=5.5A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=7.6A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
Unit
SPP_I
SPA
A
7.6
7.6¹⁾
4.6
4.6¹⁾
22.8
22.8 A
230
230 mJ
0.5
0.5
7.6
7.6 A
±20
±20 V
±30
±30
83
32 W
-55...+150
°C
Page 1
2003-06-27