SPP07N65C3_10 Datasheet, PDF (1/15 Pages) Infineon Technologies AG – Cool MOS Power Transistor

SPP07N65C3, SPI07N65C3
SPA07N65C3
CoolMOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V _DS
R_DS(on)
I_D
650 V
0.6 Ω
7.3 A
• Periodic avalanche rated
PG-TO220-3 PG-TO262-3-1 PG-TO220
• Extreme dv/dt rated
2
• High peak current capability
• Improved transconductance
23
1
P-TO220-3-31
• PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
23
1
Type
SPP07N65C3
SPI07N65C3
SPA07N65C3
Package
PG-TO220
PG-TO262-3
PG-TO220-3
Marking
07N65C3
07N65C3
07N65C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=1.5A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=2.5A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
SPP_I
SPA
7.3
7.3¹⁾
4.6
4.6¹⁾
21.9
21.9
230
230
0.5
0.5
2.5
2.5
±20
±20
±30
±30
83
32
-55...+150
Unit
A
A
mJ
A
V
W
°C
Rev. 1.92
Page 1
2010-12-21