SPP06N80C2 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Preliminary data
Cool MOS™ Power Transistor
Feature
· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· Ultra low effective capacitances
· Improved noise immunity
SPP06N80C2
COOLMOS
Power Semiconductors
Product Summary
V_DS
R_DS(on)
I_D
800 V
900 mW
6A
P-TO220-3-1
Type
SPP06N80C2
Package
Ordering Code
P-TO220-3-1 Q67040-S4351
Marking
SPP06N80C2
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=1.5A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax¹⁾
I_D=6A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Reverse diode dv/dt
I_{D puls}
E_AS
E_AR
I_AR
dv/dt
I_S=6A, V_DS < V_DD, di/dt=100A/µs, T_jmax=150°C
Gate source voltage
Power dissipation
T_C = 25 °C
Operating and storage temperature
V_GS
P_tot
T_j , T_stg
Page 1
Value
Unit
A
6
3.8
18
230
mJ
0.2
6
A
6
V/ns
±20
V
83
W
-55... +150 °C
2000-05-29