SPP06N60C3_09 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor Features New revolutionary high voltage technology

CoolMOS^TM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
• Extreme dv /dt rated
• Improved transconductance
Product Summary
V _DS @ T _j,max
R _DS(on),max
I_D
SPP06N60C3
650 V
0.75 Ω
6.2 A
PG-TO220-3-1
Type
SPP06N60C3
Package
PG-TO220-3-1
Ordering Code Marking
Q67040-S4629 06N60C3
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current¹⁾
I _D,pulse
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
E _AS
Avalanche
energy,
repetitive
t
1),2)
AR
E _AR
Avalanche
current,
repetitive
t
1)
AR
I _AR
I _D=3.1 A, V _DD=50 V
I _D=6.2 A, V _DD=50 V
Drain source voltage slope
dv /dt
I _D=6.2 A, V _DS=480 V,
T _j=125 °C
Gate source voltage
Power dissipation
Operating and storage temperature
V _GS
static
V _GS
AC (f >1 Hz)
P _tot
T _C=25 °C
T _j, T _stg
Rev. 1.4
page 1
Value
6.2
3.9
18.6
200
0.5
6.2
50
±20
±30
74
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2009-11-27