SPP04N80C3 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
SPP04N80C3
SPA04N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V_DS
R_DS(on)
I_D
800 V
1.3 Ω
4
A
• Periodic avalanche rated
P-TO220-3-31 P-TO220-3-1
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
1 ²³
P-TO220-3-31
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP04N80C3
SPA04N80C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4433
P-TO220-3-31 Q67040-S4434
Marking
04N80C3
04N80C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=0.8A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=4A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
SPP
SPA
4
4¹⁾
2.5
2.5¹⁾
12
12
170
170
Unit
A
A
mJ
0.1
0.1
4
4
A
±20
±20 V
±30
±30
63
38 W
-55...+150
°C
Page 1
2003-07-02