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SPP04N60S5_09 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology | |||
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Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Ultra low gate charge
⢠Periodic avalanche rated
⢠Extreme dv/dt rated
⢠Ultra low effective capacitances
⢠Improved transconductance
SPP04N60S5
VDS
RDS(on)
ID
600 V
0.95 â¦
4.5 A
PG-TO220
2
P-TO220-3-1
23
1
Type
SPP04N60S5
Package
PG-TO220
Ordering Code
Q67040-S4200
Marking
04N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 3.4 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 4.5 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
Unit
A
4.5
2.8
9
130
mJ
0.4
4.5
A
±20
V
±30
50
W
-55... +150
°C
Rev. 2.7
Page 1
2009-11-26
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