SPP04N60C2 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
SPP04N60C2, SPB04N60C2
SPA04N60C2
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
Product Summary
V_DS @ T_{jmax 650 V}
R_DS(on)
0.95 Ω
I_D
4.5 A
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
Type
SPP04N60C2
SPB04N60C2
SPA04N60C2
3
12
P-TO220-3-31
Package
Ordering Code
P-TO220-3-1 Q67040-S4304
P-TO263-3-2 Q67040-S4305
P-TO220-3-31 Q67040-S4330
Marking
04N60C2
04N60C2
04N60C2
Maximum Ratings
Parameter
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=3.6A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax2)
I_D=4.5A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Reverse diode dv/dt
I_S = 4.5 A, V_DS < V_DD, di/dt=100A/µs, T_jmax=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
Page 1
Symbol
Value
SPP_B SPA
I_D
4.5
4.5¹⁾
2.8
2.8¹⁾
I_{D puls}
9
9
E_AS
130
130
Unit
A
A
mJ
E_AR
0.4
0.4
I_AR
4.5
4.5 A
dv/dt
6
6 V/ns
V_GS
V_GS
P_tot
T_j , T_stg
±20
±20 V
±30
±30
50
31 W
-55...+150
°C
2002-08-12