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SPP03N60S5_03 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Cool MOS Power Transistor | |||
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Final data
Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Ultra low gate charge
⢠Periodic avalanche rated
⢠Extreme dv/dt rated
⢠Ultra low effective capacitances
⢠Improved transconductance
SPP03N60S5
SPB03N60S5
VDS
RDS(on)
ID
600 V
1.4 â¦
3.2 A
P-TO263-3-2 P-TO220-3-1
Type
SPP03N60S5
SPB03N60S5
Package
P-TO220-3-1
P-TO263-3-2
Ordering Code
Q67040-S4184
Q67040-S4197
Marking
03N60S5
03N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 2.4 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 3.2 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot
Tj , Tstg
Value
3.2
2
5.7
100
0.2
3.2
±20
±30
38
-55... +150
Unit
A
mJ
A
V
W
°C
Page 1
2003-10-06
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