SPN04N60C2 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R_DS(on) in SOT 223
• Ultra low gate charge
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity
SPN04N60C2
Product Summary
V_DS
600 V
R_DS(on) 0.95 Ω
I_D
0.8 A
SOT-223
4
Type
SPN04N60C2
Package
SOT-223
Ordering Code
Q67040-S4308
Marking
04N60C2
3
2
1
VPS05163
D,2/4
Maximum Ratings, at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A = 25 °C
T_A = 70 °C
Pulsed drain current, t_p limited by T_jmax
Reverse diode dv/dt
I_{D puls}
dv/dt
I_S=0.8A, V_DS < V_DD, di/dt=100A/µs, T_jmax=150°C
Gate source voltage
Power dissipation, T_A = 25°C
Operating and storage temperature
V_GS
P_tot
T_j , T_stg
G,1
Value
0.8
0.65
3
6
±20
1.8
-55... +150
S,3
Unit
A
V/ns
V
W
°C
Page 1
2002-07-29