SPN02N60C3_05 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances

CoolMOS^TM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Ultra low effective capacitances
• Extreme dv /dt rated
Product Summary
V _DS @ T _j,max
R _DS(on),max
I_D
SPN02N60C3
650 V
2.5 Ω
0.4 A
SOT223
Type
SPN02N60C3
Package
SOT223
Ordering Code Marking
Q67040-S4553 02N60C3
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current¹⁾
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1)
AR
I_D
I _D,pulse
E _AS
E _AR
I _AR
T _A=25 °C
T _A=70 °C
T _A=25 °C
I _D=0.9 A, V _DD=50 V
I _D=1.8 A, V _DD=50 V
Drain source voltage slope
dv /dt
I _D=1.8 A, V _DS=480 V,
T _j=125 °C
Gate source voltage
Power dissipation
Operating and storage temperature
V _GS
static
V _GS
AC (f >1 Hz)
P _tot
T _A=25 °C
T _j, T _stg
Value
0.4
0.3
5.4
50
0.07
1.8
50
±20
±30
1.8
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
Rev. 2.3
page 1
2005-02-21