SPN01N60S5 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Cool MOS Power-Transistor

Preliminary data
Cool MOS Power-Transistor
New revolutionary high voltage technology
Ultra low gate charge
Extreme dv/dt rated
Optimized capacitances
Improved noise immunity
SPN01N60S5
COOLMOS
Power Semiconductors
Product Summary
V_DS @ T_jmax 650 V
R_DS(on)
6
I_D
0.3 A
SOT-223
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Type
SPN01N60S5
Package
SOT-223
Ordering Code
Q67040-S4208
Marking
01N60S5
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D,2/4
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A = 25 °C
T_A = 70 °C
Pulsed drain current ¹⁾
T_A = 25 °C
I_{D puls}
Reverse diode dv/dt
I_S = 0.3 A, V_DS<V_DSS, di/dt = 100 A/µs,
T_jmax = 150 °C
dv/dt
Gate source voltage
V_GS
Power dissipation
P_tot
T_A = 25 °C
Operating and storage temperature
T_j , T_stg
G,1
Value
0.3
0.2
1.6
6
20
1.8
-55... +150
S,3
Unit
A
kV/µs
V
W
°C
1
2001-07-25