SPI80N10L Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
SIPMOS^ Power-Transistor
Feature
 N-Channel
 Enhancement mode
 Logic Level
175°C operating temperature
P-TO262-3-1
 Avalanche rated
 dv/dt rated
Product Summary
V_DS
100 V

R_DS(on) 14 m
I_D
80 A
P-TO263-3-2
P-TO220-3-1
Type
SPP80N10L
SPB80N10L
SPI80N10L
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4173
Q67042-S4171
Q67042-S4172
Marking
80N10L
80N10L
80N10L
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C=25°C
T_C=100°C
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse

I_D=80 A , V_DD=25V, R_GS=25
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
I_{D puls}
E_AS
E_AR
dv/dt
I_S=80A, V_DS=0V, di/dt=200A/µs
Gate source voltage
Power dissipation
T_C=25°C
V_GS
P_tot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Page 1
Value
Unit
A
80
58
320
700
mJ
25
6
kV/µs
±20
V
250
W
-55... +175
°C
55/175/56
2002-08-14