SPI80N03S2L-04 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

OptiMOS^® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x R_DS(on)
product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
SPI80N03S2L-04
SPP80N03S2L-04,SPB80N03S2L-04
Product Summary
V_DS
30 V
R_DS(on) max. SMD version 3.9 mΩ
I_D
80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N03S2L-04
SPB80N03S2L-04
SPI80N03S2L-04
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67042-S4113
Q67042-S4112
Q67042-S4114
Marking
2N03L04
2N03L04
2N03L04
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
I_D
T_C=25°C
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse
I_D=80 A , V_DD=25V, R_GS=25Ω
Repetitive avalanche energy, limited by T_jmax²⁾
Reverse diode dv/dt
I_S=80A, V_DS=24V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I_{D puls}
E_AS
E_AR
dv/dt
V_GS
P_tot
T_j , T_stg
Value
80
80
320
380
18
6
±20
188
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09