SPI73N03S2L-08 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

OptiMOS^® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x R_DS(on)
product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
SPI73N03S2L-08
SPP73N03S2L-08,SPB73N03S2L-08
Product Summary
V_DS
R_DS(on)
I_D
30 V
8.4 mΩ
73 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP73N03S2L-08
SPB73N03S2L-08
SPI73N03S2L-08
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67042-S4037
Q67042-S4036
Q67042-S4081
Marking
2N03L08
2N03L08
2N03L08
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
I_D
T_C=25°C, ¹⁾
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse
ID=73A, V_DD=25V, R_GS=25Ω
Repetitive avalanche energy, limited by T_jmax²⁾
Reverse diode dv/dt
IS=73A, V_DS=24, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I_{D puls}
E_AS
E_AR
dv/dt
V_GS
P_tot
T_j , T_stg
Value
73
62
320
170
10
6
±20
107
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-04-24