SPI42N03S2L-13 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

OptiMOS^® Power-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
P-TO262-3-1
• Avalanche rated
• dv /dt rated
SPI42N03S2L-13
SPP42N03S2L-13 SPB42N03S2L-13
Product Summary
V _DS
R _DS(on),max
I_D
30 V
12.9 mΩ
42 A
P-TO263-3-2
P-TO220-3-1
Type
SPP42N03S2L-13
SPB42N03S2L-13
SPI42N03S2L-13
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code Marking
Q67042-S4034 2N03L13
Q67042-S4035 2N03L13
Q67042-S4104 2N03L13
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current¹⁾
I_D
T _C=25 °C
T _C=100 °C
Pulsed drain current
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
Repetitive avalanche energy
E _AS
E _AR
I _D=42 A, R _GS=25 Ω
limited by T _jmax ²⁾
Reverse diode dv /dt
dv /dt
I _D=42 A, V _DS=24 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
42
42
248
110
8
6
±20
83
-55 ... 175
55/175/56
Unit
A
mJ
mJ
kV/µs
V
W
°C
Rev. 2.0
page 1
2004-06-04