SPI10N10 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
SPI10N10
SPP10N10,SPB10N10
SIPMOS^ Power-Transistor
Feature

N-Channel

Enhancement mode

175°C operating temperature

Avalanche rated
P-TO262-3-1

dv/dt rated
Product Summary
V_DS
100 V

R_DS(on) 170 m
I_D
10.3 A
P-TO263-3-2
P-TO220-3-1
Type
SPP10N10
SPB10N10
SPI10N10
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4118
Q67042-S4119
Q67042-S4120
Marking
10N10
10N10
10N10
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C=25°C
T_C=100°C
Pulsed drain current
I_{D puls}
T_C=25°C
Avalanche energy, single pulse
E_AS

I_D=10.3 A , V_DD=25V, R_GS=25
Reverse diode dv/dt
dv/dt
I_S=10.3A, V_DS=80V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
V_GS
Power dissipation
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
P_tot
T_j , T_stg
Value
10.3
7.8
41.2
60
6
±20
50
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-31