SPI07N60S5_02 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
Cool MOS™ Power Transistor
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Optimized capacitances
• Improved noise immunity
P-TO262
SPI07N60S5
SPP07N60S5, SPB07N60S5
Product Summary
V_DS @ T_jmax 650 V
R_DS(on)
0.6 Ω
I_D
7.3 A
P-TO263-3-2
P-TO220-3-1
Type
Package
Ordering Code Marking
SPP07N60S5
P-TO220-3-1 Q67040-S4172 07N60S5
SPB07N60S5
P-TO263-3-2 Q67040-S4185 07N60S5
G,1
SPI07N60S5
P-TO262
Q67040-S4328 07N60S5
Maximum Ratings, at T_c = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T_C=25°C
T_C=100°C
Pulsed drain current ¹⁾
T_C=25°C
I_D
I_{D puls}
Avalanche energy, single pulse
E_AS
I_D = 5.5 A, V_DD = 50 V
Avalanche energy (repetitive, limited by T_jmax) E_AR
I_D = 7.3 A , V_DD = 50 V
Avalanche current (repetitive, limited by T_jmax)
Reverse diode dv/dt
I_AR
dv/dt
Value
7.3
4.6
14.6
230
0.5
7.3
6
I_S=7.3A, V_DS<V_DSS, di/dt=100A/µs, T_jmax=150°C
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
V_GS
P_tot
T_j , T_stg
±20
83
-55... +150
D,2
S,3
Unit
A
mJ
A
kV/µs
V
W
°C
1
2002-07-26