SPD50P03LG_12 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS®-P Power-Transistor

OptiMOS^®-P Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 175°C operating temperature
• Avalanche rated
• dv /dt rated
• High current rating
• Pb-free lead-plating, RoHS compliant
Product Summary
V _DS
R _DS(on),max
I_D
SPD50P03L G
-30 V
7 mΩ
-50 A
PG-TO252-5
Type
Package
SPD50P03L G PG-TO252-5
Marking
50P03L
Tape and reel information
1000 pcs / reel
Lead Free
Yes
Packing
Non dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class HBM
Soldering temperature
Symbol Conditions
I_D
T _C=25 °C¹⁾
T _C=100 °C¹⁾
I _D,pulse T _C=25 °C
E _AS
I _D=-50 A, R _GS=25 Ω
dv /dt
I _D=-50 A, V _DS=24 V,
di /dt =-200 A/µs,
T _j,max=175 °C
V _GS
P _tot
T _C=25 °C
T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
-50
-50
-200
256
-6
±20
150
-55…+175
1C
260
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.9
page 1
2012-09-13