SPD50P03L Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS-P Power - Transistor

Preliminary data
OptiMOS^-P Power - Transistor
Feature
• P-Channel
• Enhancement mode
• Logic Level
• High current rating
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
SPD50P03L
Product Summary
V_DS
-30 V
R_DS(on)
7
mΩ
I_D
-50 A
P-TO252-5-3
6
12345
Type
SPD50P03L
Package
Ordering Code
P-TO252-5-3 Q67042-S4076
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C=25°C
T_C=100°C
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse
I_D=-50 A , V_DD=-25V, R_GS=25Ω
Reverse diode dv/dt
I_{D puls}
E_AS
dv/dt
I_S=-50A, V_DS=-24V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Gate
pin1
pin 2 n.c.
Drain
pin 3,6
Source
pin 4,5
Value
-50
-50
-200
256
-6
±20
150
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2001-12-06