SPD50N03S2L_08 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – N-Channel Enhancement mode Logic LevelExcellent Gate Charge x RDS(on) product (FOM)

OptiMOS^® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• High Current Rating
• Excellent Gate Charge x R_DS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
° Pb-free lead plating; RoHS compliant
Type
Package
Marking
SPD50N03S2L-06 G PG- TO252 -3 PN03L06
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current¹⁾
I_D
T_C=25°C
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse
I_D=50 A , V_DD=25V, R_GS=25Ω
Repetitive avalanche energy, limited by T_jmax²⁾
Reverse diode dv/dt
I_S=50A, V_DS=24V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I_{D puls}
E_AS
E_AR
dv/dt
V_GS
P_tot
T_j , T_stg
SPD50N03S2L-06 G
Product Summary
V_DS
30 V
R_DS(on) 6.4 mΩ
I_D
50 A
PG- TO252 -3
Value
50
50
200
250
13
6
±20
136
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
02-09-2008