SPD35N10 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
SIPMOS^ Power-Transistor
Feature

N-Channel

Enhancement mode

175°C operating temperature

Avalanche rated

dv/dt rated
SPD35N10
Product Summary
V_DS
100 V

R_DS(on) 44 m
I_D
35 A
P-TO252
Type
SPD35N10
Package
P-TO252
Ordering Code Marking
Q67042-S4125 _35N10
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C=25°C
T_C=100°C
Pulsed drain current
I_{D puls}
T_C=25°C
Avalanche energy, single pulse
E_AS

I_D=35 A , V_DD=25V, R_GS=25
Reverse diode dv/dt
dv/dt
I_S=35A, V_DS=80V, di/dt=200A/µs, T_jmax =175°C
Gate source voltage
V_GS
Power dissipation
P_tot
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Value
35
26.4
140
245
6
±20
150
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-30