SPD30P06P_08 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – SIPMOSÒ Power-Transistor Features Enhancement mode Avalanche rated

SPD30P06P G
SIPMOS^® Power-Transistor
Features
Product Summary
· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
Drain source voltage
V_DS
-60 V
W Drain-source on-state resistance RDS(on) 0.075
Continuous drain current
I_D
-30 A
· 175°C operating temperature
° Pb-free lead plating; RoHS compliat
Type
SPD30P06P G
Package
PG-TO252-3
Pin 1 PIN 2/4 PIN 3
G
D
S
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current
T_C = 25 °C
Avalanche energy, single pulse
W I_D = -30 A , V_DD = -25 V, R_GS = 25
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
I_{D puls}
E_AS
E_AR
dv/dt
I_S = -30 A, V_DS = -48 V, di/dt = 200 A/µs,
T_jmax = 175 °C
Gate source voltage
Power dissipation
T_C = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
-30
-21.5
-120
250
12.5
6
±20
125
-55...+175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 2.3
Page 1
2008-09-02