SPD30N03S2L07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOSa Power-Transistor

OptiMOS^® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x R_DS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
SPD30N03S2L-07
Product Summary
V_DS
30 V
R_DS(on) 6.7 mΩ
I_D
30 A
PG-TO252-3-11
Type
Package
Ordering Code Marking
SPD30N03S2L-07 PG-TO252-3-11 Q67042-S4091 2N03L07
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current¹⁾
I_D
T_C=25°C
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse
I_D=30 A , V_DD=25V, R_GS=25Ω
Repetitive avalanche energy, limited by T_jmax²⁾
Reverse diode dv/dt
I_S=30A, V_DS=24V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I_{D puls}
E_AS
E_AR
dv/dt
V_GS
P_tot
T_j , T_stg
Value
30
30
120
250
13
6
±20
136
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.1
Page 1
2005-02-14