SPD30N03S2L-10_08 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS Power-Transistor Feature N-Channel Enhancement mode

OptiMOS^® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Low On-Resistance R_DS(on)
• Excellent Gate Charge x R_DS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
° Pb-free lead plating; RoHS compliant
Type
Package
SPD30N03S2L-10G PG-TO252-3
Marking
2N03L10
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current¹⁾
I_D
T_C=25°C
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse
I_D=30 A , V_DD=25V, R_GS=25Ω
Repetitive avalanche energy, limited by T_jmax²⁾
Reverse diode dv/dt
I_S=30A, V_DS=24V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I_{D puls}
E_AS
E_AR
dv/dt
V_GS
P_tot
T_j , T_stg
SPD30N03S2L-10 G
Product Summary
V_DS
30 V
R_DS(on)
10 mΩ
I_D
30 A
PG-TO252-3
Value
30
30
120
150
10
6
±20
100
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
02-09-2008