SPD18P06P_08 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – SIPMOSÒ Power-Transistor Features Enhancement mode Avalanche rated

SPD18P06P G
SIPMOS^® Power-Transistor
Features
Product Summary
· P-Channel
· Enhancement mode
Drain source voltage
V_DS
-60 V
Drain-source on-state resistance R_DS(on) 0.13 W
· Avalanche rated
· dv/dt rated
Continuous drain current
I_D
-18.6 A
· 175°C operating temperature
° Pb-free lead plating; RoHS compliant
Type
SPD18P06P G
Package
PG-TO252-3
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current
T_C = 25 °C
I_{D puls}
Avalanche energy, single pulse
E_AS
I_D = -18.6 A , V_DD = -25 V, R_GS = 25 W
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
E_AR
dv/dt
I_S = -18.6 A, V_DS = -48 V, di/dt = 200 A/µs,
T_jmax = 175 °C
Gate source voltage
Power dissipation
T_C = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Pin 1 PIN 2/4 PIN 3
G
D
S
Value
-18.6
-13.2
-74.4
150
8
6
Unit
A
mJ
kV/µs
±20
V
80
W
-55...+175
°C
55/175/56
Rev 3.4
Page 1
2008-09-02