SPD11N10 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
SIPMOS^ Power-Transistor
Feature
 N-Channel
 Enhancement mode
175°C operating temperature
 Avalanche rated
 dv/dt rated
P-TO251
SPD11N10
SPU11N10
Product Summary
V_DS
100 V

R_DS(on) 170 m
I_D
10.5 A
P-TO252
Type
SPD11N10
SPU11N10
Package
P-TO252
P-TO251
Ordering Code
Q67042-S4121
Q67042-S4122
Marking
11N10
11N10
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C=25°C
T_C=100°C
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse

I_D=10.5 A , V_DD=25V, R_GS=25
I_{D puls}
E_AS
Reverse diode dv/dt
dv/dt
I_S=10.5A, V_DS=80V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
V_GS
Power dissipation
P_tot
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Value
10.5
7.8
41.2
60
6
±20
50
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-31