SPD100N03S2L-04 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

SPD100N03S2L-04
OptiMOS^® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x R_DS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
Product Summary
V_DS
30 V
R_DS(on) 4.2 mΩ
I_D
100 A
P-TO252-5-1
Titel:
C:\ARJ\VPT0916
Erstellt von:
Type
Package
Ordering Code Marking
SPD100N03S2L-04 P-TO252-5-1 Q67042-S4128 PN03L04
1)
Gate
pin 1
n.c.: pin 2
Drain
pin 3,6
Source
pin 4,5
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current²⁾
T_C=100°C
I_D
A
100
100
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse
I_D=80A, V_DD=25V, R_GS=25Ω
Repetitive avalanche energy, limited by T_jmax³⁾
Reverse diode dv/dt
I_{D puls}
E_AS
E_AR
dv/dt
400
325
mJ
15
6
kV/µs
I_S=100A, V_DS=24V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
±20
V
150
W
-55... +175
°C
55/175/56
Page 1
2003-05-09