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SPD09P06PL_08 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor Feature N-Channel Enhancement mode | |||
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SIPMOSï=Power-Transistor
Feature
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⢠Avalanche rated
⢠dAvv/datlarnactehde rated
⢠Pdbv-/fdret eralteeadd plating; RoHS compliant
SPD09P06PL G
Product Summary
VDS
-60 V
RDS(on) 0.25
ID
-9.7 A
PG-TO252-3
Type
SPD09P06PL G
Package
Lead free
PG-TO252-3 Yes
Gate
pin1
Drain
pin 2
Source
pin 3
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC=25°C
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=-9.7 A , VDD=-25V, RGS=25
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
ID puls
EAS
EAR
dv/dt
IS=-9.7A, VDS=-48, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
VGS
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
-9.7
-6.8
-38.8
70
4.2
6
±20
42
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 2.5
Page 1
2008-07-29
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