SPD09P06PL Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

SIPMOS^=Power-Transistor
Feature
 P-Channel
 Enhancement mode
 Logic Level
175°C operating temperature
 Avalanche rated
 dv/dt rated
Final data
SPD09P06PL
SPU09P06PL
Product Summary
V_DS
-60 V

R_DS(on) 0.25
I_D
-9.7 A
P-TO251-3-1
P-TO252
Type
SPD09P06PL
SPU09P06PL
Package
P-TO252
P-TO251-3-1
Ordering Code
Q67042-S4007
Q67042-S4020
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C=25°C
T_C=100°C
Pulsed drain current
I_{D puls}
T_C=25°C
Avalanche energy, single pulse
E_AS

I_D=-9.7 A , V_DD=-25V, R_GS=25
Avalanche energy, periodic limited by T_jmax
E_AR
Reverse diode dv/dt
dv/dt
I_S=-9.7A, V_DS=-48, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
V_GS
Power dissipation
P_tot
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Gate
pin1
Drain
pin 2
Source
pin 3
Value
-9.7
-6.8
-38.8
70
4.2
6
±20
42
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2001-07-02