SPD08P06PG_12 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS® Power-Transistor

SIPMOS^® Power-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
• Pb-free lead finishing; RoHS compliant
° Qualified according to AEC Q101
SPD08P06P G
Product Summary
V _DS
R _DS(on),max
I_D
-60 V
0.3 Ω
-8.8 A
PG-TO252-3
Type
Package
SPD08P06PG PG-TO252-3
Tape and reel information
1000 pcs / reel
Marking Lead free
08P06P Yes
Packing
Non dry
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C
T _A=100 °C
T _A=25 °C
Avalanche energy, single pulse
E _AS
I _D=8.83 A, R _GS=25 Ω
Avalanche energy, periodic limited by
T_jmax
E _AR
Reverse diode dv /dt
dv /dt
I _D=8.83 A, V _DS=48 V,
di /dt =-200 A/µs,
T _j,max=175 °C
Gate source voltage
Power dissipation
Operating and storage temperature
V _GS
P _tot
T _A=25 °C
T _j, T _stg
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
steady state
-8.83
-6.25
-35.32
70
4.2
-6
±20
42
"-55 ... +175"
260 °C
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 1.92
page 1
2012-09-10