SPD08N50C3_13 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

SPD08N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R_DS(on) in TO-252
• Ultra low gate charge
V_DS @ T_jmax 560 V
R_DS(on)
0.6 Ω
I_D
7.6 A
PG-TO252
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
; available in Halogen free mold compound^a)
Type
SPD08N50C3
Package
PG-TO252
Ordering Code
Q67040-S4569
Marking
08N50C3
Maximum Ratings, at T_C = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=5.5A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax¹⁾
I_D=7.6A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
Reverse diode dv/dt ⁶⁾
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
dv/dt
Value
7.6
4.6
22.8
230
0.5
7.6
±20
±30
83
-55... +150
15
Unit
A
mJ
A
V
W
°C
V/ns
a) _{non-Halogen free (OPN: SPD08N50C3BT); Halogen free (OPN: SPD08N50C3AT)}
Rev. 2.56
Page 1
201038--0074--3111