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| SPD08N50C3 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor | |||
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Final data
Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Worldwide best RDS(on) in TO-252
⢠Ultra low gate charge
⢠Periodic avalanche rated
⢠Extreme dv/dt rated
⢠Ultra low effective capacitances
⢠Improved transconductance
SPD08N50C3
VDS @ Tjmax 560 V
RDS(on)
0.6 â¦
ID
7.6 A
P-TO252-3-1
Type
SPD08N50C3
Package
Ordering Code
P-TO252-3-1 Q67040-S4569
Marking
08N50C3
Maximum Ratings, at TC = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID puls
EAS
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID=7.6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
7.6
4.6
22.8
230
0.5
7.6
±20
±30
83
-55... +150
Unit
A
mJ
A
V
W
°C
Page 1
2003-06-27
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