SPD08N10 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Power Transistor

Preliminary Data
SIPMOS® Power Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• dv/dt rated
SPD 08N10
V_DS
100 V
R_DS(on) 0.3 Ω
I_D
8.4 A
Type
SPD08N10
SPU08N10
Package
P-TO252
P-TO251
Ordering Code Packaging
Q67040-S4126-A2 Tape and Reel
Q67040-S4118-A2 Tube
Pin 1 Pin 2 Pin 3
G
D
S
Maximum Ratings, at T_j = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 ˚C
T_C = 100 ˚C
Pulsed drain current
T_C = 25 ˚C
Avalanche energy, single pulse
I_D = 8.4 A, V_DD = 25 V, R_GS = 25 Ω
IDpulse
E_AS
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
E_AR
dv/dt
I_S = 8.4 A, V_DS = 80 V, di/dt = 200 A/µs
Gate source voltage
Power dissipation
T_C = 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
8.4
5.4
33.6
30
4
6
±20
40
-55... +175
55/150/56
Unit
A
mJ
kV/µs
V
W
˚C
Data Sheet
1
05.99