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| SPD06N80C3_13 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor | |||
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SPD06N80C3
CoolMOSTM Power Transistor
Features
⢠New revolutionary high voltage technology
⢠Extreme dv/dt rated
⢠High peak current capability
⢠Qualified according to JEDEC1) for target applications
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
800 V
0.9 â¦
31 nC
⢠Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda)
⢠Ultra low gate charge
PG-TO252-3
⢠Ultra low effective capacitances
CoolMOSTM 800V designed for:
⢠Industrial application with high DC bulk voltage
⢠Switching Application ( i.e. active clamp forward )
Type
SPD06N80C3
Package
PG-TO252-3
Marking
06N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T A=25 °C
T A=100 °C
T A=25 °C
I D=1.2 A, V DD=50 V
I D=6 A, V DD=50 V
V DS=0â¦640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot
T A=25 °C
T j, T stg
Value
6
3.8
18
230
0.2
6
50
±20
±30
83
-55 ... 150
a) non-Halogen free (OPN: SPD06N80C3BT); Halogen free (OPN: SPD06N80C3AT)
Rev. 2.921
page 1
Unit
A
mJ
A
V/ns
V
W
°C
20113-097-2371
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