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| SPD06N80C3_0810 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOS Power Transistor | |||
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CoolMOSTM Power Transistor
Features
⢠New revolutionary high voltage technology
⢠Extreme dv/dt rated
⢠High peak current capability
⢠Qualified according to JEDEC1) for target applications
⢠Pb-free lead plating; RoHS compliant
⢠Ultra low gate charge
⢠Ultra low effective capacitances
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
SPD06N80C3
800 V
0.9 â¦
31 nC
PG-TO252-3
CoolMOSTM 800V designed for:
⢠Industrial application with high DC bulk voltage
⢠Switching Application ( i.e. active clamp forward )
Type
SPD06N80C3
Package
PG-TO252-3
Marking
06N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T A=25 °C
T A=100 °C
T A=25 °C
I D=1.2 A, V DD=50 V
I D=6 A, V DD=50 V
V DS=0â¦640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot
T A=25 °C
T j, T stg
Value
Unit
6
A
3.8
18
230
mJ
0.2
6
A
50
V/ns
±20
V
±30
83
W
-55 ... 150
°C
Rev. 2.4
page 1
2008-10-15
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