 English |
|
|
|
|
|
|
|
| SPD06N80C3 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor | |||
| |||
|
Final data
Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Worldwide best RDS(on) in TO252
⢠Ultra low gate charge
⢠Periodic avalanche rated
⢠Extreme dv/dt rated
SPD06N80C3
VDS
RDS(on)
ID
800 V
0.9 â¦
6
A
P-TO252
Type
SPD06N80C3
Package
P-TO252
Ordering Code
Q67040-S4352
Marking
06N80C3
Maximum Ratings, at TC = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID puls
EAS
ID=1.2A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID=6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Power dissipation, TC = 25°C
Operating and storage temperature
IAR
VGS
Ptot
Tj , Tstg
Value
6
3.8
18
230
0.2
6
±20
83
-55... +150
Unit
A
mJ
A
V
W
°C
Page 1
2003-07-02
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese