SPD04P10PG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS® Power-Transistor

SIPMOS^® Power-Transistor
Features
• P-Channel
• Enhancement mode
• Normal level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
° Qualified according to AEC Q101
Product Summary
V _DS
R _DS(on),max
I_D
SPD04P10P G
-100 V
1Ω
-4 A
PG-TO252-3
Type
Package
SPD04P10P G PG-TO252-3
Marking
04P10P
Lead free
Yes
Packing
Non dry
Tape and reel information
1000 pcs / reel
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I_D
T _C=25 °C
T _C=100 °C
Value
Unit
-4
A
-2.8
Pulsed drain current
I _D,pulse V _GS=-10 V, I _D=-2.8 A
-16
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
E _AS
I _D=-4 A, R _GS=25 Ω
V _GS
P _tot
T _C=25 °C
T _j, T _stg
ESD class
JESD22-A114-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
57
mJ
±20
V
38
W
-55 ... 175
°C
1A (250 V to 500 V)
260 °C
55/175/56
Rev 1.6
page 1
2012-09-10