SPD04N80C3_13 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor

SPD04N80C3
CoolMOS^TM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
Product Summary
V _DS
R _DS(on)max @ T_j = 25°C
Q _g,typ
800 V
1.3 W
23 nC
• Pb-free lead plating; RoHS compliant; available in Halogen free mold compound^a)
• Ultra low gate charge
PG-TO252-3
• Ultra low effective capacitances
CoolMOS^TM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
aswd
Type
SPD04N80C3
Package
PG-TO252-3
Marking
04N80C3
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
I_D
I _D,pulse
T _C=25 °C
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E _AS
E _AR
I _AR
dv /dt
Gate source voltage
V _GS
I _D=0.8 A, V _DD=50 V
I _D=4 A, V _DD=50 V
V _DS=0…640 V
static
AC (f >1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Value
4
2.5
12
170
0.1
4
50
±20
±30
63
-55 ... 150
a) _{non-Halogen free (OPN: SPD04N80C3BT); Halogen free (OPN: SPD04N80C3AT)}
Rev. 2.921
page 1
Unit
A
mJ
A
V/ns
V
W
°C
20113-097-2381