SPD04N60C3 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
SPD04N60C3
SPU04N60C3
V_DS @ T_jmax 650
V
R_DS(on)
0.95 Ω
I_D
4.5 A
P-TO251
P-TO252
Type
SPD04N60C3
SPU04N60C3
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4412
-
Marking
04N60C3
04N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
I_{D puls}
Avalanche energy, single pulse
E_AS
I_D = 3.4 A, V_DD = 50 V
Avalanche energy, repetitive t_AR limited by T_jmax¹⁾ E_AR
I_D = 4.5 A, V_DD = 50 V
Avalanche current, repetitive t_AR limited by T_jmax I_AR
Gate source voltage static
V_GS
Gate source voltage AC (f >1Hz)
V_GS
Power dissipation, T_C = 25°C
Operating and storage temperature
P_tot
T_j , T_stg
Value
4.5
2.8
13.5
130
0.4
4.5
±20
±30
50
-55... +150
Unit
A
mJ
A
V
W
°C
Page 1
2003-10-02