SPD01N60C3 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPU01N60C3
SPD01N60C3
V_DS @ T_jmax 650
V
R_DS(on)
6
Ω
I_D
0.8 A
PG-TO252
PG-TO251
Type
SPU01N60C3
SPD01N60C3
Package
PG-TO251
PG-TO252
Ordering Code
Q67040-S4193
Q67040-S4188
Marking
01N60C3
01N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
I_{D puls}
Avalanche energy, single pulse
E_AS
I_D = 0.6 A, V_DD = 50 V
Avalanche energy, repetitive t_AR limited by T_jmax¹⁾ E_AR
I_D = 0.8 A, V_DD = 50 V
Avalanche current, repetitive t_AR limited by T_jmax I_AR
Gate source voltage static
V_GS
Gate source voltage AC (f >1Hz)
V_GS
Power dissipation, T_C = 25°C
P_tot
Operating and storage temperature
Reverse diode dv/dt ³⁾
T_j , T_stg
dv/dt
Value
0.8
0.5
1.6
20
0.01
0.8
±20
±30
11
-55... +150
15
Unit
A
mJ
A
V
W
°C
V/ns
Rev. 2.5
Page 1
2008-04-07