SPD-U04N60S5 Datasheet, PDF (1/12 Pages) –

Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPU04N60S5
SPD04N60S5
V_DS
R_DS(on)
I_D
PG-TO252
600 V
0.95 Ω
4.5 A
PG-TO251
2
3
1
3
2
1
Type
SPU04N60S5
SPD04N60S5
Package
PG-TO251
PG-TO252
Ordering Code
Q67040-S4228
Q67040-S4202
Marking
04N60S5
04N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
I_{D puls}
Avalanche energy, single pulse
E_AS
I_D = 3.4 A, V_DD = 50 V
Avalanche energy, repetitive t_AR limited by T_jmax¹⁾ E_AR
I_D = 4.5 A, V_DD = 50 V
Avalanche current, repetitive t_AR limited by T_jmax I_AR
Gate source voltage
V_GS
Gate source voltage AC (f >1Hz)
V_GS
Power dissipation, T_C = 25°C
P_tot
Operating and storage temperature
T_j , T_stg
Value
4.5
2.8
9
130
0.4
4.5
±20
±30
50
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.5
Page 1
2008-04-08