SPBI11N60C3 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Cool MOS Power Transistor

SPP11N60C3, SPB11N60C3
Preliminary data
SPI11N60C3
Cool MOS™=Power Transistor
Feature
•=New revolutionary high voltage technology
• Worldwide best R_DS(on) in TO 220
• Ultra low gate charge
•=Periodic avalanche rated
• Extreme dv/dt rated
•=High peak current capability
P-TO262-3-1
•=Improved transconductance
•=150 °C operating temperature
COOLMOS
Power Semiconductors
Product Summary
V_DS @ T_jmax 650 V
R_DS(on)
0.38 Ω
I_D
11 A
P-TO263-3-2
P-TO220-3-1
Type
SPP11N60C3
SPB11N60C3
SPI11N60C3
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4395
Q67040-S4396
Q67042-S4403
Marking
11N60C3
11N60C3
11N60C3
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=5.5A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax1)
I_D=11A, V_DD=50V
I_{D puls}
E_AS
E_AR
Avalanche current, repetitive t_AR limited by T_jmax
Reverse diode dv/dt
I_AR
dv/dt
I_S=11A, V_DS <=V_DD, di/dt=100A/µs, T_jmax=150°C
Gate source voltage static
Gate source voltage dynamic
Power dissipation, T_C = 25°C
Operating and storage temperature
V_GS
V_GS
P_tot
T_j , T_stg
Value
11
7
33
340
0.6
11
6
±20
±30
125
-55... +150
Unit
A
mJ
A
V/ns
V
W
°C
Page 1
2001-07-05