SPB80P06PG_11 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – SIPMOSÒ Power-Transistor

SPB80P06P G
SIPMOS^® Power-Transistor
Features
Product Summary
· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
Drain source voltage
V_DS
-60 V
W Drain-source on-state resistance RDS(on) 0.023
Continuous drain current
I_D
-80 A
· 175°C operating temperature
° Pb-free lead plating: RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Type
SPB80P06P G
Package Lead free
PG-TO263-3 Yes
Pin 1 PIN 2/4 PIN 3
G
D
S
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_{C =} 25 °C, ¹⁾
T_C = 100 °C
Pulsed drain current
T_C = 25 °C
I_{D puls}
Avalanche energy, single pulse
W I_D = -80 A , V_DD = -25 V, R_GS = 25
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
E_AS
E_AR
dv/dt
I_S = -80 A, V_DS = -48 , di/dt = 200 A/µs,
T_jmax = 175 °C
Gate source voltage
Power dissipation
T_C = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
-80
-64
-320
823
34
6
±20
340
-55...+175
55/175/56
1Current _{limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry ID = -91A}
Rev 1.6
Page 1
Unit
A
mJ
kV/µs
V
W
°C
2011-09-01