SPB80N06S-08_05 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

SIPMOS^® Power-Transistor
Features
• N-channel - Normal Level -Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Avalanche test
PG-TO263-3-2
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
55 V
7.7 mΩ
80 A
Green Package
PG-TO262-3-1
PG-TO220-3-1
• Repetive Avalanche up to
T_jmax = 175 °C
• dv /dt rated
V_DD=30 V, I_D=80 A, V_GS=10 V, R_G=2.4 Ω
Type
SPB80N06S-08
SPI80N06S-08
SPP80N06S-08
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Ordering Code Marking
SP00_T0_C0=-82458°0C8, _{V GS}1=N1006V08
SP00_T0_C0=-8120501°8C, _V 1_GSN=01600V8
SP0000-84809 1N0608
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current¹⁾
I_D
T _C=25 °C, V _GS=10 V
80
A
T _C=100 °C, V _GS=10 V
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=80 A, R _GS=25 Ω,
V _DD=25 V
Avalanche energy, periodic²⁾
E _AR
T _j=175 °C
Reverse diode dv /dt ²⁾
dv /dt
I _D=80 A, V _DS=40 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Rev. 1.0
page 1
80
320
700
mJ
30
6
kV/µs
±20
V
300
W
-55 ... +175
°C
55/175/56
2005-06-28